| PART |
Description |
Maker |
| H5TQ1G63DFR-12C H5TQ1G63DFR-N0C H5TQ1G63DFR-11C |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| H5TQ1G63EFRG7J H5TQ1G63EFRG7C H5TQ1G63EFRG7I H5TQ1 |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| K4B1G1646C |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| K4B1G1646D K4B1G1646D-HCF7 K4B1G1646D-HCF8 K4B1G16 |
1Gb D-die DDR3 SDRAM Specification
|
Samsung semiconductor
http://
|
| K4B1G0446C-CF8 K4B1G0446C K4B1G0446C-ZCG9 K4B1G044 |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
http://
|
| EBJ10EE8BAFA-8C-E EBJ10EE8BAFA-AE-E EBJ10EE8BAFA-D |
128M X 72 DDR DRAM MODULE, DMA240
1GB Unbuffered DDR3 SDRAM DIMM
|
ELPIDA MEMORY INC
|
| WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存，无缓冲，锁相环，FBGA封装
|
Square D by Schneider Electric
Diodes, Inc.
|
| ST62P20CM3/XXX ST62P10CM6/XXX ST62P10CM1/XXX ST62P |
8-BIT MICROCONTROLLER
IC, SDRAM, DDR400, 16MEGX16
1GB DDR SDRAM SODIMM 8位微控制
|
Exar, Corp.
|
| HYB18T1G160AC-3.7 HYB18T1G160AC-5 HYB18T1G400AC-3. |
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 400 (3-3-3); Available 3Q04
|
Infineon
|
| W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| MT41J128M16 MT41J512M4 |
DDR3 SDRAM
|
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